发明申请
US20110303977A1 LDPMOS STRUCTURE FOR ENHANCING BREAKDOWN VOLTAGE AND SPECIFIC ON RESISTANCE IN BICMOS-DMOS PROCESS
有权
用于增强BICMOS-DMOS工艺中的断开电压和电阻特性的LDPMOS结构
- 专利标题： LDPMOS STRUCTURE FOR ENHANCING BREAKDOWN VOLTAGE AND SPECIFIC ON RESISTANCE IN BICMOS-DMOS PROCESS
- 专利标题（中）： 用于增强BICMOS-DMOS工艺中的断开电压和电阻特性的LDPMOS结构
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申请号： US12797896申请日： 2010-06-10
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公开(公告)号： US20110303977A1公开(公告)日： 2011-12-15
- 发明人: Yin-Fu Huang , Miao-Chun Chung , Shih-Chin Lien
- 申请人： Yin-Fu Huang , Miao-Chun Chung , Shih-Chin Lien
- 专利权人： MACRONIX INTERNATIONAL CO.,LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO.,LTD.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a lightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.
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