公开(公告)号：US20140015016A1

公开(公告)日：2014-01-16

申请号：US13547549

申请日：2012-07-12

申请人： Miao-Chun Chung ,  An-Li Cheng ,  Yin-Fu Huang ,  Shih-Chin Lien ,  Shyi-Yuan Wu

发明人： Miao-Chun Chung ,  An-Li Cheng ,  Yin-Fu Huang ,  Shih-Chin Lien ,  Shyi-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7833 ,  H01L29/0619

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bulk, a gate, a source, a drain and a bulk contact region. The gate is on the bulk. The source and the drain are in the bulk on opposing sides of the gate respectively. The bulk contact region is only in a region of the bulk adjacent to the source. The bulk contact region is electrically connected to the bulk.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括体，栅极，源极，漏极和体接触区域。 门是大量的。 源极和漏极分别在栅极的相对侧上。 体接触区域仅在与源极相邻的部分的区域中。 体接触区域电连接到本体。

公开(公告)号：US08304830B2

公开(公告)日：2012-11-06

申请号：US12797896

申请日：2010-06-10

申请人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

发明人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

IPC分类号： H01L29/772

CPC分类号： H01L29/0847 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a lightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.

摘要翻译： 描述了具有增强的击穿电压和比导通电阻的LDPMOS结构，以及制造该结构的方法。 形成在该结构的漂移区域并围绕轻掺杂漏极区的P场注入层有效地增加了击穿电压，同时保持相对较低的比导通电阻。

公开(公告)号：US20110303977A1

公开(公告)日：2011-12-15

申请号：US12797896

申请日：2010-06-10

申请人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

发明人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a lightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.

摘要翻译： 描述了具有增强的击穿电压和比导通电阻的LDPMOS结构，以及制造该结构的方法。 形成在该结构的漂移区域并围绕轻掺杂漏极区的P场注入层有效地增加了击穿电压，同时保持相对较低的比导通电阻。

公开(公告)号：US08643072B1

公开(公告)日：2014-02-04

申请号：US13547549

申请日：2012-07-12

申请人： Miao-Chun Chung ,  An-Li Cheng ,  Yin-Fu Huang ,  Shih-Chin Lien ,  Shyi-Yuan Wu

发明人： Miao-Chun Chung ,  An-Li Cheng ,  Yin-Fu Huang ,  Shih-Chin Lien ,  Shyi-Yuan Wu

IPC分类号： H01L29/76

CPC分类号： H01L29/7833 ,  H01L29/0619

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bulk, a gate, a source, a drain and a bulk contact region. The gate is on the bulk. The source and the drain are in the bulk on opposing sides of the gate respectively. The bulk contact region is only in a region of the bulk adjacent to the source. The bulk contact region is electrically connected to the bulk.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括体，栅极，源极，漏极和体接触区域。 门是大量的。 源极和漏极分别在栅极的相对侧上。 体接触区域仅在与源极相邻的部分的区域中。 体接触区域电连接到本体。

公开(公告)号：US20130037883A1

公开(公告)日：2013-02-14

申请号：US13648964

申请日：2012-10-10

申请人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

发明人： Yin-Fu Huang ,  Miao-Chun Chung ,  Shih-Chin Lien

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a tightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.

摘要翻译： 描述了具有增强的击穿电压和比导通电阻的LDPMOS结构，以及制造该结构的方法。 形成在该结构的漂移区并围绕紧密掺杂的漏极区的P场注入层有效地增加击穿电压，同时保持相对较低的比导通电阻。

公开(公告)号：US20140077866A1

公开(公告)日：2014-03-20

申请号：US13616522

申请日：2012-09-14

申请人： An-Li Cheng ,  Miao-Chun Chung ,  Chih-Chia Hsu ,  Yin-Fu Huang

发明人： An-Li Cheng ,  Miao-Chun Chung ,  Chih-Chia Hsu ,  Yin-Fu Huang

IPC分类号： H01L29/02 ,  H03K3/01

CPC分类号： H03K17/16 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/7816 ,  H03K17/56

摘要： A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.

摘要翻译： 提供了一种应用该高压半导体器件的现场设备和操作方法。 现场设备包括具有第二导电类型的第一阱和具有第一导电类型的第二阱，所述第二阱具有形成在衬底（具有第一导电类型）中并且从衬底的表面向下延伸的第一导电类型， 第一阱和衬底位于第一阱的另一侧; 具有第一导电类型并形成在第二阱中的第一掺杂区域，第一掺杂区域与第一阱间隔开; 电连接到第一掺杂区并横跨第一阱区的导线; 以及绝缘地定位在导电线和第一阱之间的导电体，并且导电体相应地穿过第一阱区。

公开(公告)号：US08896061B2

公开(公告)日：2014-11-25

申请号：US13616522

申请日：2012-09-14

申请人： An-Li Cheng ,  Miao-Chun Chung ,  Chih-Chia Hsu ,  Yin-Fu Huang

发明人： An-Li Cheng ,  Miao-Chun Chung ,  Chih-Chia Hsu ,  Yin-Fu Huang

IPC分类号： H01L29/66 ,  H01L29/02 ,  H03K3/01

CPC分类号： H03K17/16 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/7816 ,  H03K17/56

摘要： A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.

摘要翻译： 提供了一种应用该高压半导体器件的现场设备和操作方法。 现场设备包括具有第二导电类型的第一阱和具有第一导电类型的第二阱，所述第二阱具有形成在衬底（具有第一导电类型）中并且从衬底的表面向下延伸的第一导电类型， 第一阱和衬底位于第一阱的另一侧; 具有第一导电类型并形成在第二阱中的第一掺杂区域，第一掺杂区域与第一阱间隔开; 电连接到第一掺杂区并横跨第一阱区的导线; 以及绝缘地定位在导电线和第一阱之间的导电体，并且导电体相应地穿过第一阱区。