发明申请
- 专利标题： LOW COST MULTI-STATE MAGNETIC MEMORY
- 专利标题（中）： 低成本多状态磁记忆
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申请号： US13216997申请日： 2011-08-24
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公开(公告)号： US20110305078A1公开(公告)日： 2011-12-15
- 发明人: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- 申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- 申请人地址： US CA Fremont
- 专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; H01L29/82
摘要：
A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
公开/授权文献
- US08456897B2 Low cost multi-state magnetic memory 公开/授权日：2013-06-04