中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

106 records (took 0.025 seconds)

    METHOD OF SENSING DATA OF A MAGNETIC RANDOM ACCESS MEMORIES (MRAM)
    1.
    发明申请
    METHOD OF SENSING DATA OF A MAGNETIC RANDOM ACCESS MEMORIES (MRAM) 有权
    磁性随机存取记录（MRAM）的数据传感方法

    公开(公告)号：US20130329488A1

    公开(公告)日：2013-12-12

    申请号：US13491159

    申请日：2012-06-07

    Applicant: Ebrahim Abedifard ,  Parviz Keshtbod

    Inventor： Ebrahim Abedifard ,  Parviz Keshtbod

    IPC: G11C11/16

    CPC classification number: G11C11/1673 ,  G11C11/1657

    Abstract: A MTJ is sensed by applying a first reference current, first programming the MTJ to a first value using the first reference current, detecting the resistance of the first programmed MTJ, and if the detected resistance is above a first reference resistance, declaring the MTJ to be at a first state. Otherwise, upon determining if the detected resistance is below a second reference resistance, declaring the MTJ to be at a second state. In some cases, applying a second reference current through the MTJ and second programming the MTJ to a second value using the second reference current. Detecting the resistance of the second programmed MTJ and in some cases, declaring the MTJ to be at the second state, and in other cases, declaring the MTJ to be at the first state and programming the MTJ to the second state.

    Abstract translation: 通过施加第一参考电流来感测MTJ，首先使用第一参考电流将MTJ编程为第一值，检测第一编程MTJ的电阻，并且如果检测到的电阻高于第一参考电阻，则将MTJ声明为 处于第一个状态。 否则，在确定检测到的电阻是否低于第二参考电阻时，声明MTJ处于第二状态。 在某些情况下，通过MTJ施加第二参考电流，并使用第二参考电流对MTJ进行第二次编程。 检测第二个编程的MTJ的电阻，并且在某些情况下，声明MTJ处于第二状态，在其他情况下，声明MTJ处于第一状态并将MTJ编程到第二状态。

    Embedded Magnetic Random Access Memory (MRAM)
    7.
    发明申请
    Embedded Magnetic Random Access Memory (MRAM) 有权
    嵌入式磁随机存取存储器（MRAM）

    公开(公告)号：US20130017627A1

    公开(公告)日：2013-01-17

    申请号：US13623054

    申请日：2012-09-19

    Applicant: Parviz KESHTBOD ,  Ebrahim ABEDIFARD

    Inventor： Parviz KESHTBOD ,  Ebrahim ABEDIFARD

    IPC: H01L43/12

    CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/105 ,  H01L27/228

    Abstract: A magnetic random access memory (MRAM) cell includes an embedded MRAM and an access transistor. The embedded MRAM is formed on a number of metal-interposed-in-interlayer dielectric (ILD) layers, which each include metal dispersed therethrough and are formed on top of the access transistor. An magneto tunnel junction (MTJ) is formed on top of a metal formed in the ILD layers that is in close proximity to a bit line. An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ. Ultimately, metal is formed on top of the bit line and extended to contact the MTJ.

    Abstract translation: 磁性随机存取存储器（MRAM）单元包括嵌入式MRAM和存取晶体管。 嵌入式MRAM形成在多个金属插入层间电介质（ILD）层中，每个层包括分散在其中的金属并形成在存取晶体管的顶部。 在位于靠近位线的ILD层中形成的金属的顶部上形成磁隧道结（MTJ）。 MTJ掩模用于对MTJ进行图案蚀刻，以暴露MTJ。 最终，在位线顶部形成金属并延伸以接触MTJ。

    Low cost multi-state magnetic memory
    8.
    发明授权
    Low cost multi-state magnetic memory 有权
    低成本多状态磁存储器

    公开(公告)号：US08330240B2

    公开(公告)日：2012-12-11

    申请号：US13213026

    申请日：2011-08-18

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

    Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

    Abstract translation: 多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

    Non-volatile magnetic memory with low switching current and high thermal stability
    9.
    发明授权
    Non-volatile magnetic memory with low switching current and high thermal stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US08310020B2

    公开(公告)日：2012-11-13

    申请号：US13455888

    申请日：2012-04-25

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

    Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability
    10.
    发明申请
    Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability 有权
    具有低开关电流和高热稳定性的非易失性垂直磁存储器

    公开(公告)号：US20120212998A1

    公开(公告)日：2012-08-23

    申请号：US13453940

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: G11C11/16 ,  H01L43/10

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The non-volatile current-switching magnetic memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer with a perpendicular anisotropy that is formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer, and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 非易失性电流切换磁存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的具有垂直各向异性的第一自由层，形成在隧道层顶部的粒状膜层 自由层，形成在所述粒状膜层的顶部上的第二自由层，形成在所述第二层的顶部上的盖层，以及形成在所述盖层的顶部上的顶部电极。

Patent Agency Ranking