A CVD apparatus is provided that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. The CVD apparatus is for forming a SiC film on a surface of a carbonaceous substrate (10) except for a part thereof covered by a masking jig (7) by introducing a gas into the apparatus. The carbonaceous substrate (10) has a recessed mask portion (10a) formed in a portion of the carbonaceous substrate (10), and the masking jig (7) is fitted in the mask portion (10a). In the CVD apparatus, the masking jig (7) is secured to a film formation jig (2) so that the carbonaceous substrate (10) is supported by the film formation jig (2), and an angle formed by a main surface of the carbonaceous substrate (10) with respect to the vertical axis (9) is set to 2°.