发明申请
- 专利标题： TRENCH CAPACITOR
- 专利标题（中）： TRENCH电容器
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申请号： US12818448申请日： 2010-06-18
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公开(公告)号： US20110309474A1公开(公告)日： 2011-12-22
- 发明人: Chengwen Pei , Xi Li , Geng Wang
- 申请人： Chengwen Pei , Xi Li , Geng Wang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A trench and method of fabrication is disclosed. The trench shape is cylindrosymmetric, and is created by forming a dopant profile that is monotonically increasing in dopant concentration level as a function of depth into the substrate. A dopant sensitive etch is then performed, resulting in a trench shape providing increased surface area, yet having relatively smooth trench walls.
公开/授权文献
- US08299573B2 Trench capacitor 公开/授权日：2012-10-30
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