发明申请
US20110309492A1 INTEGRATED CIRCUIT SYSTEM WITH RECESSED THROUGH SILICON VIA PADS AND METHOD OF MANUFACTURE THEREOF 有权
集成电路系统,通过硅胶通过硅胶及其制造方法

  • 专利标题: INTEGRATED CIRCUIT SYSTEM WITH RECESSED THROUGH SILICON VIA PADS AND METHOD OF MANUFACTURE THEREOF
  • 专利标题(中): 集成电路系统,通过硅胶通过硅胶及其制造方法
  • 申请号: US12820491
    申请日: 2010-06-22
  • 公开(公告)号: US20110309492A1
    公开(公告)日: 2011-12-22
  • 发明人: HeeJo ChiNamJu ChoHanGil Shin
  • 申请人: HeeJo ChiNamJu ChoHanGil Shin
  • 主分类号: H01L23/498
  • IPC分类号: H01L23/498 H01L21/60 H01L21/768
INTEGRATED CIRCUIT SYSTEM WITH RECESSED THROUGH SILICON VIA PADS AND METHOD OF MANUFACTURE THEREOF
摘要:
A method of manufacture of an integrated circuit system includes: providing a substrate with a face surface having a via therein and a back surface having a trench therein; filling the via with a conductive pillar; forming a recessed contact pad in the trench; filling the recessed contact pad partially with solder; and forming an under-bump metal having a base surface in electrical contact with the conductive pillar, and having sides that extend away from the face surface of the substrate and further extend beyond the base surface.
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