发明申请
- 专利标题: SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 基板加工装置及制造半导体装置的方法
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申请号: US13163165申请日: 2011-06-17
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公开(公告)号: US20110311339A1公开(公告)日: 2011-12-22
- 发明人: Takeshi YASUI , Yukitomo HIROCHI , Satoshi TAKANO , Ritsuo HORII , Makoto KAWABATA
- 申请人: Takeshi YASUI , Yukitomo HIROCHI , Satoshi TAKANO , Ritsuo HORII , Makoto KAWABATA
- 申请人地址: JP Tokyo
- 专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-138524 20100617
- 主分类号: H01L21/677
- IPC分类号: H01L21/677
摘要:
Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and a barrier auxiliary unit installed between the substrate support and the barrier, wherein the barrier auxiliary unit is installed at places other than standby spaces of the end effectors.
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