发明申请
US20110312157A1 WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH
有权
使用基于FEMTOSECOND的激光和等离子体蚀刻的抛光
- 专利标题： WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH
- 专利标题（中）： 使用基于FEMTOSECOND的激光和等离子体蚀刻的抛光
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申请号： US13160713申请日： 2011-06-15
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公开(公告)号： US20110312157A1公开(公告)日： 2011-12-22
- 发明人: Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , James M. Holden
- 申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , James M. Holden
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/3065 ; H01L21/82
摘要：
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
公开/授权文献
- US08642448B2 Wafer dicing using femtosecond-based laser and plasma etch 公开/授权日：2014-02-04
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