发明申请
- 专利标题： Methods of Fabricating Nitride Semiconductor Structures with Interlayer Structures
- 专利标题（中）： 用层间结构制造氮化物半导体结构的方法
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申请号： US12907556申请日： 2010-10-19
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公开(公告)号： US20110312159A1公开(公告)日： 2011-12-22
- 发明人: Adam William Saxler , Albert Augustus Burk, JR.
- 申请人： Adam William Saxler , Albert Augustus Burk, JR.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor structure includes a first layer of a nitride semiconductor material, a substantially unstrained nitride interlayer on the first layer of nitride semiconductor material, and a second layer of a nitride semiconductor material on the nitride interlayer. The nitride interlayer has a first lattice constant and may include aluminum and gallium and may be conductively doped with an n-type dopant. The first layer and the second layer together have a thickness of at least about 0.5 μm. The nitride semiconductor material may have a second lattice constant, such that the first layer may be more tensile strained on one side of the nitride interlayer than the second layer may be on the other side of the nitride interlayer.
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