发明申请
US20110312163A1 Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
大面积纳米电子基板及其用途

  • 专利标题: Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor
  • 专利标题(中): 大面积纳米电子基板及其用途
  • 申请号: US13218286
    申请日: 2011-08-25
  • 公开(公告)号: US20110312163A1
    公开(公告)日: 2011-12-22
  • 发明人: Linda T. RomanoJian Chen
  • 申请人: Linda T. RomanoJian Chen
  • 申请人地址: US CA Palo Alto
  • 专利权人: NANOSYS, INC.
  • 当前专利权人: NANOSYS, INC.
  • 当前专利权人地址: US CA Palo Alto
  • 主分类号: H01L21/20
  • IPC分类号: H01L21/20 B82Y40/00
Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor
摘要:
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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