发明申请
- 专利标题: finFETS AND METHODS OF MAKING SAME
- 专利标题(中): 鳍片及其制造方法
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申请号: US13228519申请日: 2011-09-09
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公开(公告)号: US20110316081A1公开(公告)日: 2011-12-29
- 发明人: Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
- 申请人: Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
公开/授权文献
- US08410544B2 finFETs and methods of making same 公开/授权日:2013-04-02