发明申请
- 专利标题: INTEGRATED CIRCUIT SYSTEM WITH VIA AND METHOD OF MANUFACTURE THEREOF
- 专利标题(中): 集成电路系统及其制造方法
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申请号: US12825266申请日: 2010-06-28
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公开(公告)号: US20110316166A1公开(公告)日: 2011-12-29
- 发明人: Hong Yu , Huang Liu , Feng Zhao , Meisheng Zhou , Liang-Choo Hsia
- 申请人: Hong Yu , Huang Liu , Feng Zhao , Meisheng Zhou , Liang-Choo Hsia
- 申请人地址: SG Singapore
- 专利权人: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
A method of manufacture of an integrated circuit system includes: forming an etch stop layer over a bulk substrate; forming a buffer layer on the etch stop layer; forming a hard mask on the buffer layer; forming a through silicon via through the etch stop layer with the hard mask detected and the buffer layer removed with a low down force; and forming a passivation layer on the through silicon via and the etch stop layer.
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