- 专利标题： SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
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申请号： US13229262申请日： 2011-09-09
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公开(公告)号： US20110318901A1公开(公告)日： 2011-12-29
- 发明人: Antonio Luis Pacheco ROTONDARO , Trace Q. HURD , Elisabeth Marley KOONTZ
- 申请人： Antonio Luis Pacheco ROTONDARO , Trace Q. HURD , Elisabeth Marley KOONTZ
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
公开/授权文献
- US08329589B2 Semiconductor device with gate-undercutting recessed region 公开/授权日：2012-12-11
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