发明申请
US20120001147A1 Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays
有权
非易失性电阻氧化物记忆单元，非易失性电阻氧化物存储器阵列以及形成非易失性电阻氧化物记忆单元和存储器阵列的方法
- 专利标题： Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays
- 专利标题（中）： 非易失性电阻氧化物记忆单元，非易失性电阻氧化物存储器阵列以及形成非易失性电阻氧化物记忆单元和存储器阵列的方法
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申请号： US13231667申请日： 2011-09-13
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公开(公告)号： US20120001147A1公开(公告)日： 2012-01-05
- 发明人: John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
- 申请人： John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
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