Invention Application
- Patent Title: WAFER STACKED PACKAGE WAVING BERTICAL HEAT EMISSION PATH AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 波浪堆叠包装波浪散热加热路径及其制作方法
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Application No.: US13235850Application Date: 2011-09-19
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Publication No.: US20120001348A1Publication Date: 2012-01-05
- Inventor: Joong-Hyun BAEK , Hee-Jin LEE
- Applicant: Joong-Hyun BAEK , Hee-Jin LEE
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2006-0105628 20061030
- Main IPC: H01L23/46
- IPC: H01L23/46

Abstract:
A wafer stacked semiconductor package (WSP) having a vertical heat emission path and a method of fabricating the same are provided. The WSP comprises a substrate on which semiconductor chips are mounted; a plurality of semiconductor chips stacked vertically on the substrate; a cooling through-hole formed vertically in the plurality of semiconductor chips, and sealed; micro holes formed on the circumference of the cooling through-hole; and coolant filling the inside of the cooling through-hole. Accordingly, the WSP reduces a temperature difference between the semiconductor chips and quickly dissipates the heat generated by the stacked semiconductor chips.
Public/Granted literature
- US08310046B2 Wafer stacked package waving bertical heat emission path and method of fabricating the same Public/Granted day:2012-11-13
Information query
IPC分类: