Abstract:
A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate. The first semiconductor chip may be electrically connected with the package substrate. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The second semiconductor chip may be electrically connected with the first semiconductor chip. The second semiconductor chip may have a protrusion overhanging an area beyond a side surface of the first semiconductor chip. The supporting member may be interposed between the protrusion of the second semiconductor chip and the package substrate to prevent a deflection of the protrusion. Thus, the protrusion may not be deflected.
Abstract:
Disclosed is an electrolytic copper plating solution composition, which includes a copper salt, an acidic solution, and a PEG-PPG-PEG copolymer, and in which the PEG-PPG-PEG copolymer which is a non-ionic surfactant is added, thus decreasing the surface tension of the electrolytic copper plating solution, thereby enhancing plating wettability.
Abstract:
The present invention relates to a WLAN virtualization system which is capable of efficiently separating a Basic Service Set (BSS) into a plurality of virtual BSSs in a Time Division Multiplexing (TDM) manner. The WLAN virtualization system includes an Access Point (AP) for providing a plurality of vBSSs, and a plurality of stations corresponding to the vBSSs provided by the AP. Each of the vBSSs is operated on a superframe basis, the superframe being scheduled by a beacon frame transmitted from the AP. The superframe includes the beacon frame, one contention-free period, and one contention period. The CPs of the vBSSs include intervals which do not overlap each other. The vBSSs can be classified into any groups designated by a service provider based on certain criteria such as physical layer, QoS, security level, or network access authority, and times can be allocated to superframes at different rates or frequencies.
Abstract:
A light emitting device with improved heat dissipation is provided. The light emitting device includes a first lead frame, a second lead frame, a light emitting element and a housing. The first lead frame includes a light emitting element mounting portion, a first heat dissipation portion extending from the light emitting element mounting portion in a first direction, and second and third heat dissipation portions extending from the light emitting element mounting portion in a second direction opposite to the first direction. The second lead frame extends in the second direction and is disposed between and spaced apart from the second and third heat dissipation portions. The light emitting element is mounted on the light emitting element mounting portion and is electrically coupled to the first and second lead frames. The housing encapsulates the first and second lead frames. The second and third heat dissipation portions have a first width and the second lead frame has a second width the same as or different from the first width.
Abstract:
Provided is a semiconductor plating system for plating a semiconductor object with a desired layer. The semiconductor plating system include a plating tank configured to accommodate a plating solution for use in plating the semiconductor object, and a plating solution induction device configured to induce the plating solution to spirally flow toward the semiconductor object.
Abstract:
Provided is a semiconductor memory module allowing a filling member formed between a module substrate and memory chips mounted on the module substrate to completely fill the space between the module substrate and the memory chips. According to embodiments of the present invention, the semiconductor memory module includes a module substrate having at least one memory chip mounted on the substrate such that its edges are oblique to major and minor axes bisecting the module substrate. The oblique orientation allows for an improved opening between memory chips formed on the substrate so that the filling member may be properly formed between the module substrate and the memory chips to prevent voids where the filling member is not formed.
Abstract:
A data transfer method for matching an upper protocol layer to a high speed serial bus. In the data transfer method, it is determined whether transfer data to be transferred from the upper protocol layer to the high speed serial bus, is stream data that is transferred to a predetermined node which the bus can identify, and form data flow defined by a predetermined flow classifier. If the transfer data is determined to be stream data, a channel is allocated in the bus and the transfer data is transferred through the channel. However, if the transfer data is determined not to be stream data, the transfer data is transferred by an asynchronous transfer method according to the high speed serial bus standard, without allocating a channel. Due to a channel Matron of the high speed serial bus, an upper protocol layer of existing applications which do not specify a service to provide, can be effectively matched to the high speed serial bus.
Abstract:
A method of transferring data between networks includes storing a connection path set between predetermined data from a first network and a predetermined address in a second network during initial connection between the first and second networks, and transferring the predetermined data from the first network along the stored path. Accordingly, data transmission speed is faster by pre-mapping a data path between networks, and hardware and software loads on the gateway for repeating data between networks can be reduced.
Abstract:
Provided are a semiconductor package of a semiconductor chip, a semiconductor module, an electronic system, and methods of manufacturing the same. The method includes mounting a semiconductor chip on a package substrate, forming a molding member on the semiconductor chip, forming via holes penetrating the molding member to expose a portion of a top surface of the semiconductor chip, the via holes being arranged in a lattice shape in a plan view, and forming thermally conductive via plugs in the via holes.
Abstract:
A graphics processing method and devices using the same is provided. The method includes receiving a plurality of texels arranged in a tiled format and rearranging, by a graphics processing unit (GPU), texels into a sequential format. In a tiled format, texels may be arranged in tiles, at least one tile including M×N texels. In the sequential format, the texels may be arranged in a scan line order of a display.