发明申请
- 专利标题: ATOMIC LAYER DEPOSITION APPARATUS
- 专利标题(中): 原子层沉积装置
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申请号: US13235855申请日: 2011-09-19
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公开(公告)号: US20120006265A1公开(公告)日: 2012-01-12
- 发明人: BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- 申请人: BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- 主分类号: C23C16/455
- IPC分类号: C23C16/455
摘要:
A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
公开/授权文献
- US08626330B2 Atomic layer deposition apparatus 公开/授权日:2014-01-07