公开(公告)号：US20100099270A1

公开(公告)日：2010-04-22

申请号：US12646706

申请日：2009-12-23

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： H01L21/302 ,  G06F17/00 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20100093170A1

公开(公告)日：2010-04-15

申请号：US12645117

申请日：2009-12-22

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

IPC分类号： H01L21/3205

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到​​沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成 在原子层沉积（ALD）过程中在基底上形成钨成核层。 该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

公开(公告)号：US07695563B2

公开(公告)日：2010-04-13

申请号：US11621040

申请日：2007-01-08

申请人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

发明人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC分类号： C30B25/14

CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

摘要翻译： 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US20090056626A1

公开(公告)日：2009-03-05

申请号：US12261487

申请日：2008-10-30

申请人： RANDHIR P.S. THAKUR ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

发明人： RANDHIR P.S. THAKUR ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

IPC分类号： H01L21/30

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/6719

摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

摘要翻译： 一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量给所述室的反应区域的阀的操作同步的排气系统。

公开(公告)号：US07384867B2

公开(公告)日：2008-06-10

申请号：US11206491

申请日：2005-08-18

申请人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

发明人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US07175713B2

公开(公告)日：2007-02-13

申请号：US10352257

申请日：2003-01-27

申请人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

发明人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

IPC分类号： C23C16/00 ,  C23C16/503 ,  C23C16/505 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/6719

摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

摘要翻译： 一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

公开(公告)号：US07115494B2

公开(公告)日：2006-10-03

申请号：US11338565

申请日：2006-01-24

申请人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

发明人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

摘要翻译： 通过控制其中所含的氟的存在来降低难熔金属层的电阻的方法和系统。 本发明基于以下发现：当采用ALD技术在基底上形成难熔金属层时，所用载体会影响所得层中氟的存在。 结果，该方法具有化学吸附到底物上的第一化合物和第二化合物的交替单层，第二化合物具有与之有关的氟原子，其中第一和第二化合物中的每一个与第一和第二化合物一起被引入处理室 用于控制与第二化合物的单层相关的氟原子的量的载气。

公开(公告)号：US07033922B2

公开(公告)日：2006-04-25

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US06855368B1

公开(公告)日：2005-02-15

申请号：US09625336

申请日：2000-07-25

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/285 ,  H01L21/768 ,  B05D5/12 ,  H01L21/00

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

摘要翻译： 通过控制其中所含的氟的存在来降低难熔金属层的电阻的方法和系统。 本发明基于以下发现：当采用ALD技术在基底上形成难熔金属层时，所用载体会影响所得层中氟的存在。 结果，该方法具有化学吸附到底物上的第一化合物和第二化合物的交替单层，第二化合物具有与之有关的氟原子，其中第一和第二化合物中的每一个与所述第一和第二化合物一起被引入处理室，连同 用于控制与第二化合物的单层相关的氟原子的量的载气。

公开(公告)号：US06020270A

公开(公告)日：2000-02-01

申请号：US134290

申请日：1998-08-14

申请人： Jerry Yuen Kui Wong ,  David Nin-Kou Wang ,  Mei Chang ,  Alfred W. Mak ,  Dan Maydan

发明人： Jerry Yuen Kui Wong ,  David Nin-Kou Wang ,  Mei Chang ,  Alfred W. Mak ,  Dan Maydan

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/00

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/76232

摘要： A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

摘要翻译： 公开了使用碘酸盐或溴化物气体化学蚀刻单晶硅，多晶硅，硅化物和聚硅化物的方法。 碘酸盐/溴化物气体化学蚀刻具有非常高的纵横比和良好轮廓控制的窄深沟槽，并且没有黑色硅形成或其他不期望的现象。