发明申请
US20120007053A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
审中-公开
基于氮化物的半导体器件及其制造方法
- 专利标题： NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 基于氮化物的半导体器件及其制造方法
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申请号： US12917834申请日： 2010-11-02
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公开(公告)号： US20120007053A1公开(公告)日： 2012-01-12
- 发明人: Woo Chul JEON , Ki Yeol Park , Jung Hee Lee , Young Hwan Park
- 申请人： Woo Chul JEON , Ki Yeol Park , Jung Hee Lee , Young Hwan Park
- 专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 优先权： KR10-2010-0065422 20100707
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/20
摘要：
Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer.
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