Invention Application
US20120007170A1 High source to drain breakdown voltage vertical field effect transistors
审中-公开
高源极漏极击穿电压垂直场效应晶体管
- Patent Title: High source to drain breakdown voltage vertical field effect transistors
- Patent Title (中): 高源极漏极击穿电压垂直场效应晶体管
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Application No.: US12803864Application Date: 2010-07-09
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Publication No.: US20120007170A1Publication Date: 2012-01-12
- Inventor: Chao-Cheng Lu
- Applicant: Chao-Cheng Lu
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
An increase source to drain breakdown voltage vertical channel transistors device having a structure that is similar to that of a conventional metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate and a body. According the N+N− and P+P− junction theory of semiconductor, add to N− junction between the source N+ junction to P junction of N-Channel MOSFET; add to P− junction between the source P+ junction to n junction of P-Channel MOSFET; With the proposed MOSFET of which the source to drain breakdown voltage are increase may be achieved.
Information query
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