公开(公告)号：US20130241310A1

公开(公告)日：2013-09-19

申请号：US13385935

申请日：2012-03-16

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M5/08 ,  H01L43/06

CPC classification number: H01L43/065 ,  H02M5/08

Abstract: This invention relates is a Hall effect transformer, which include: Hall effect device, insulation layer and semiconductor, place the insulator layer between the Hall effect device and semiconductor used as an isolated, when AC current flow through the AC capacitors and Hall effect device, semiconductor corresponds to get both terminals of the AC voltage, and AC power transmission purposes.

Abstract translation: 本发明涉及一种霍尔效应变压器，它包括：霍尔效应器件，绝缘层和半导体，将霍尔效应器件和半导体之间的绝缘体层隔离，当交流电流流过交流电容器和霍尔效应器件时， 半导体对应于获得两端的交流电压和交流电力传输的目的。

公开(公告)号：US20070109826A1

公开(公告)日：2007-05-17

申请号：US11273469

申请日：2005-11-15

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M7/00

CPC classification number: H02M3/33592 ,  Y02B70/1475

Abstract: The Lus Semiconductor in this invention is characterized by replacing the static shielding diode (SSD) of traditional Power Enhancement Mode field Effect Transistor (EMFETs) with polarity reversed (comparing with traditional SSD) SSD, Schottky Diode, or Zener Diode, or face-to-face or back-to-back coupled Schottky Diodes, Zener Diodes, Fast Diodes, or Four Layer Devices such as DIAC and Triac. With the proposed EMFETs of which the drain to source resistors (Rds) are quite low, two major functions of high efficiency synchronous rectification may be achieved.

Abstract translation: 本发明中的Lus Semiconductor的特征在于，将传统功率增强模式场效应晶体管（EMFET）的静态屏蔽二极管（SSD）替代为极性反转（与传统SSD相比）SSD，肖特基二极管或齐纳二极管，或面对面 表面或背对背耦合的肖特基二极管，齐纳二极管，快速二极管或四层器件，如DIAC和Triac。 由于漏源电阻（Rds）的EMFET比较低，所以可以实现高效同步整流的两大功能。

公开(公告)号：US11502510B2

公开(公告)日：2022-11-15

申请号：US17395741

申请日：2021-08-06

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02H9/02 ,  H02H9/04

Abstract: The electronic circuit protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first diode, a second diode, a first resistor, a second resistor and a third resistor, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

公开(公告)号：US20120007170A1

公开(公告)日：2012-01-12

申请号：US12803864

申请日：2010-07-09

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/086

Abstract: An increase source to drain breakdown voltage vertical channel transistors device having a structure that is similar to that of a conventional metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate and a body. According the N+N− and P+P− junction theory of semiconductor, add to N− junction between the source N+ junction to P junction of N-Channel MOSFET; add to P− junction between the source P+ junction to n junction of P-Channel MOSFET; With the proposed MOSFET of which the source to drain breakdown voltage are increase may be achieved.

Abstract translation: 具有与传统的金属氧化物半导体场效应晶体管（MOSFET）类似的结构的漏极击穿电压垂直沟道晶体管器件的增加源，其包括源极，漏极，栅极和主体。 根据半导体的N + N和P + P-结理论，加入N沟道MOSFET的源极N +结与P结之间的N-junction; 添加到P沟道MOSFET的源极P +结到n结之间的P-结; 可以实现其提供的源极到漏极击穿电压的所提出的MOSFET。

公开(公告)号：US08084823B2

公开(公告)日：2011-12-27

申请号：US12589456

申请日：2009-10-26

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H01L27/06

CPC classification number: H03K17/063 ,  H02M3/33592 ,  Y02B70/1475

Abstract: A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage equal or over load voltage, can be achieve FET turn on, and gate minimization threshold voltage under load voltage, can be achieve FET turn off.

Abstract translation: 一种用于本发明的同步整流的FET器件，一种没有体二极管的FET，具有栅极最小化阈值电压等于或过负载电压的特性，可以实现FET导通，并且可以实现负载电压下的栅极最小化阈值电压 FET关闭。

公开(公告)号：US20110267138A1

公开(公告)日：2011-11-03

申请号：US12799733

申请日：2010-05-03

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M7/217

CPC classification number: H02M3/33592 ,  Y02B70/1475

Abstract: This invention relates in Synchronous Rectifier Circuits, comprises: AC input terminal, switch, driving circuit, protect opposite current circuit and a load, to improved conventional Synchronous Rectifier Circuits, can be achieve rectify function.

Abstract translation: 本发明涉及同步整流电路，包括：交流输入端子，开关，驱动电路，保护相反电流电路和负载，改进传统的同步整流电路，可实现整流功能。

公开(公告)号：US20080290405A1

公开(公告)日：2008-11-27

申请号：US11804390

申请日：2007-05-21

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/495

Abstract: A power MOSFET diode includes a plurality of unit elements, each of which has a gate and a drain that are connected to each other by the structure and the process of UMOS, VMOS, VDMOS, and etc., so as to integrate the unit elements into a PMD without any body diode of the traditional UMOS, VMOS, or VDMOS for providing a one-way electrical conductivity. The PMD is different from traditional diodes or Schottky diodes, because a forward bias is existed when the traditional diodes or Schottky diodes conduct the electricity on one-way. However, a drain-source on-state resistance (RDS) is used to replace the consumption of the forward bias when the PMD conducts the electricity on one-way. Due to the RDS of the PMD is lower and easy to be parallel connected to each other, the PMD can be used to substantially lower the power consumption and applied to various industries.

Abstract translation: 功率MOSFET二极管包括多个单元元件，每个单元元件具有通过UMOS，VMOS，VDMOS等的结构和过程彼此连接的栅极和漏极，以便将单元元件 进入PMD，没有传统UMOS，VMOS或VDMOS的任何体二极管，用于提供单向电导率。 PMD与传统二极管或肖特基二极管不同，因为当传统二极管或肖特基二极管单向导通电源时，存在正向偏压。 然而，当PMD单向导通电时，漏源导通状态电阻（RDS）用于替代正向偏置的消耗。 由于PMD的RDS较低，易于并联，PMD可大大降低功耗并适用于各行业。

公开(公告)号：US06880740B2

公开(公告)日：2005-04-19

申请号：US10326684

申请日：2002-12-20

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: B25C1/06 ,  B25C5/15

CPC classification number: B25C1/06

Abstract: An impact enhancing device of an electric nailer, comprising: an AC power source, a protection circuit, a first switch, a full-wave rectifier, a timing controller circuit, an energy-storage circuit, a solid-state switch circuit, an electro-magnetic coil device, a DC power source, a second switch, a reset enable single shot trigger circuit, and a relay. Thus, the electric nailer provides a larger impact force with a smaller volume and a lighter weight.

Abstract translation: 一种电动钉枪的冲击增强装置，包括：交流电源，保护电路，第一开关，全波整流器，定时控制器电路，能量存储电路，固态开关电路，电 - 线圈装置，直流电源，第二开关，复位使能单触发电路和继电器。 因此，电动钉枪提供更大的冲击力，体积更小和重量更轻。

公开(公告)号：US5162682A

公开(公告)日：1992-11-10

申请号：US645036

申请日：1991-01-22

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H03K17/0814 ,  H03K17/79

CPC classification number: H03K17/08144 ,  H03K17/79

Abstract: A solid state relay comprising an input terminal, an optical coupler, a reference voltage circuit, a light dependent resistor circuit, a triac driver circuit, a triac circuit, an output terminal and a snubber circuit, and being constructed in such a way that it can turn ON and OFF a supply of AC power to the load.

Abstract translation: 一种固态继电器，包括输入端子，光耦合器，参考电压电路，光依赖电阻器电路，三端双向可控硅驱动器电路，三端双向可控硅开关电路，输出端子和缓冲电路，并且以这样的方式构造： 可以为负载打开和关闭交流电源。

公开(公告)号：US5043611A

公开(公告)日：1991-08-27

申请号：US405328

申请日：1989-09-11

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H03K17/732

CPC classification number: H03K17/732

Abstract: A new SCR (silicon controlled rectifier) controller characterized by comprising input circuits, SCR trigger circuits, charge circuits, commutation capacitor, discharge circuits and SCR and being constructed in such way that when the input pulse is positive, it will work to activate the trigger and cause the SCR to be in turn-on state as well as to charge the commutation capacitor and when the input pulse is zero, the stored energy of the commutation capacitor will discharge to cause the SCR to be in turn-off state so that it does not need any other electric energy to attain the objective to cut off the source.

Abstract translation: 一种新的SCR（可控硅整流器）控制器，其特征在于包括输入电路，SCR触发电路，充电电路，换向电容器，放电电路和SCR，并且被构造成使得当输入脉冲为正时，它将用于激活触发 并且导致SCR导通状态以及对换向电容器充电，并且当输入脉冲为零时，换向电容器的存储能量将放电以使SCR处于截止状态，使得 不需要任何其他电能来达到切断电源的目的。