Invention Application
- Patent Title: ION SOURCE
- Patent Title (中): 离子源
-
Application No.: US12959601Application Date: 2010-12-03
-
Publication No.: US20120007490A1Publication Date: 2012-01-12
- Inventor: PENG LIU , DUAN-LIANG ZHOU , PI-JIN CHEN , ZHAO-FU HU , CAI-LIN GUO , BING-CHU DU , SHOU-SHAN FAN
- Applicant: PENG LIU , DUAN-LIANG ZHOU , PI-JIN CHEN , ZHAO-FU HU , CAI-LIN GUO , BING-CHU DU , SHOU-SHAN FAN
- Applicant Address: TW Tu-Cheng CN Beijing
- Assignee: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- Current Assignee: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- Current Assignee Address: TW Tu-Cheng CN Beijing
- Priority: CN201010220307.4 20100709
- Main IPC: H01J21/10
- IPC: H01J21/10

Abstract:
An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.
Public/Granted literature
- US08253314B2 Ion source having secondary electron enhancing electrode Public/Granted day:2012-08-28
Information query