发明申请
- 专利标题: ENHANCED DENSIFICATION OF SILICON OXIDE LAYERS
- 专利标题(中): 氧化硅层的增强渗透
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申请号: US13178057申请日: 2011-07-07
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公开(公告)号: US20120009413A1公开(公告)日: 2012-01-12
- 发明人: Marlon Menezes , Frank Y. Xu , Fen Wan
- 申请人: Marlon Menezes , Frank Y. Xu , Fen Wan
- 申请人地址: US TX Austin
- 专利权人: MOLECULAR IMPRINTS, INC.
- 当前专利权人: MOLECULAR IMPRINTS, INC.
- 当前专利权人地址: US TX Austin
- 主分类号: B32B3/26
- IPC分类号: B32B3/26 ; B28B3/00 ; B05D3/00 ; B05D3/12 ; H01L21/312 ; B05D5/00
摘要:
Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.
公开/授权文献
- US08541053B2 Enhanced densification of silicon oxide layers 公开/授权日:2013-09-24