发明申请
- 专利标题： REDUCING CONTAMINATION IN A PROCESS FLOW OF FORMING A CHANNEL SEMICONDUCTOR ALLOY IN A SEMICONDUCTOR DEVICE
- 专利标题（中）： 在半导体器件中形成通道半导体合金的工艺流程中减少污染
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申请号： US13237265申请日： 2011-09-20
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公开(公告)号： US20120009751A1公开(公告)日： 2012-01-12
- 发明人: Stephan Kronholz , Berthold Reimes , Richard Carter , Fernando Koch , Gisela Schammler
- 申请人： Stephan Kronholz , Berthold Reimes , Richard Carter , Fernando Koch , Gisela Schammler
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 优先权： DE102010001402.8 20100129
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.
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