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1.发明申请REDUCING CONTAMINATION IN A PROCESS FLOW OF FORMING A CHANNEL SEMICONDUCTOR ALLOY IN A SEMICONDUCTOR DEVICE 有权在半导体器件中形成通道半导体合金的工艺流程中减少污染公开(公告)号：US20120009751A1
公开(公告)日：2012-01-12
申请号：US13237265
申请日：2011-09-20
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/28 , H01L21/8234
摘要： In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.
摘要翻译： 在用于在早期制造阶段形成高k金属栅电极结构的复杂方法中，可以在选择性外延生长工艺的基础上沉积阈值调节半导体合金，而不会影响衬底的背面。 因此，至少在选择性外延生长过程中，可以通过提供掩模材料和保存材料来抑制或减少背面等的任何负面影响，例如衬底和工艺工具的污染，降低表面质量等。
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2.发明授权Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device 有权减少在半导体器件中形成沟道半导体合金的工艺流程中的污染公开(公告)号：US08513080B2
公开(公告)日：2013-08-20
申请号：US13237265
申请日：2011-09-20
IPC分类号： H01L21/336
CPC分类号： H01L21/28 , H01L21/8234
摘要： In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.
摘要翻译： 在用于在早期制造阶段形成高k金属栅电极结构的复杂方法中，可以在选择性外延生长工艺的基础上沉积阈值调节半导体合金，而不会影响衬底的背面。 因此，至少在选择性外延生长过程中，可以通过提供掩模材料和保存材料来抑制或减少背面等的任何负面影响，例如衬底和工艺工具的污染，降低表面质量等。
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