发明申请
US20120009786A1 PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
有权
等离子体处理方法和半导体器件的制造方法
- 专利标题： PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 等离子体处理方法和半导体器件的制造方法
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申请号： US13178759申请日： 2011-07-08
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公开(公告)号： US20120009786A1公开(公告)日： 2012-01-12
- 发明人: Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
- 申请人： Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
- 申请人地址： JP Tokyo JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOKYO ELECTRON LIMITED
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo JP Minato-ku
- 优先权： JPP2010-156543 20100709; JPP2011-129790 20110610
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
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