发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
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申请号: US13182095申请日: 2011-07-13
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公开(公告)号: US20120012807A1公开(公告)日: 2012-01-19
- 发明人: Takeshi YAMAGUCHI , Hirofumi Inoue , Reika Ichihara , Takayuki Tsukamoto , Takashi Shigeoka , Katsuyuki Sekine , Shinya Aoki
- 申请人: Takeshi YAMAGUCHI , Hirofumi Inoue , Reika Ichihara , Takayuki Tsukamoto , Takashi Shigeoka , Katsuyuki Sekine , Shinya Aoki
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-161424 20100716
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.
公开/授权文献
- US08759806B2 Semiconductor memory device 公开/授权日:2014-06-24