发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13244369申请日： 2011-09-24
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公开(公告)号： US20120012910A1公开(公告)日： 2012-01-19
- 发明人: Kazuo Yamazaki
- 申请人： Kazuo Yamazaki
- 申请人地址： JP Tokyo
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-011532 20080122
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.
公开/授权文献
- US08928143B2 Semiconductor device and method of manufacturing the same 公开/授权日：2015-01-06
信息查询
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