摘要:
A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
摘要:
To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.
摘要:
A machine tool 1 comprises a bed 11, a column 12, a spindle head 15, a spindle 16, a saddle 17, a table 18, a feed mechanism for moving the spindle head 15, the saddle 17 and the table 18 in Z-axis, Y-axis and X-axis directions respectively, a position detector for detecting the positions of the spindle head 15, saddle 17 and table 18, a controller for feedback controlling the feed mechanism, a position detector 51 for detecting the position of the spindle head 15, a position detector 54 for detecting the position of the spindle head 15, a position detector 57 for detecting the position of the table 18, and a measurement frame 50 which is configured with a different member from the bed 11 and the column 12 and on which readers 53, 56, 59 of the position detectors 51, 54, 57 are disposed.
摘要:
It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line.
摘要:
When a horizontal skipping operation is performed in a solid-state imaging apparatus that includes an A/D converting circuit in each column and that applies an arithmetic operation process to a digitalized signal and an arithmetic operation is performed with signals held by a plurality of register circuits, A/D converters and register circuits in columns in which signals are skipped, or not read out, are not involved in the operations. A more consideration is needed in terms of the use efficiency of circuits. A unit for connecting a register circuit of a certain column and a register circuit of a different column is arranged.
摘要:
To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.
摘要:
To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact hiving a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.
摘要:
Provided is an electronic system wherein power is accurately supplied even with a power delivery line resistance and a connector contact resistance, and furthermore, a plurality of electronic devices having requiring different power supply voltages can be handled with one power supply device. The electronic system is provided with an electronic device (50), and a power supply device (10) which is arranged to be connected/removed to and from the electronic device (50) and supplies power through a cable when connected. The electronic device (50) is provided with a first detection circuit (51) for performing detection relating to the supply amount of the power supply and outputting a first detection signal, and a control signal terminal.
摘要:
A cold-cathode fluorescent lamp having high brightness with long life and an electrode for this lamp are offered. At least one part of the electrode surface is formed by using one material selected from the group consisting of rhodium, palladium, and alloys of these. For example, a surface layer made of the foregoing material is formed on a base. To increase the bonding strength between the surface layer and the base, a bonding layer made of gold or gold alloy is formed on the base. Because a metal such as rhodium is resistant to alloying with mercury and has a high melting point, a cold-cathode fluorescent lamp provided with an electrode made of the foregoing metal can suppress not only the consumption of the mercury due to the formation of an amalgam but also the reduction in brightness due to insufficient discharging. Furthermore, because the lamp can suppress the consumption of the mercury and electrode, the lamp has long life.
摘要:
To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.