发明申请
US20120014180A1 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating 有权
具有挥发性和非挥发性功能的半导体存储器和操作方法

  • 专利标题: Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
  • 专利标题(中): 具有挥发性和非挥发性功能的半导体存储器和操作方法
  • 申请号: US13246582
    申请日: 2011-09-27
  • 公开(公告)号: US20120014180A1
    公开(公告)日: 2012-01-19
  • 发明人: Yuniarto Widjaja
  • 申请人: Yuniarto Widjaja
  • 申请人地址: US CA San Jose
  • 专利权人: Zeno Semiconductor, Inc.
  • 当前专利权人: Zeno Semiconductor, Inc.
  • 当前专利权人地址: US CA San Jose
  • 主分类号: G11C14/00
  • IPC分类号: G11C14/00
Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
摘要:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
信息查询
0/0