发明申请
US20120014180A1 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
有权
具有挥发性和非挥发性功能的半导体存储器和操作方法
- 专利标题: Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
- 专利标题(中): 具有挥发性和非挥发性功能的半导体存储器和操作方法
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申请号: US13246582申请日: 2011-09-27
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公开(公告)号: US20120014180A1公开(公告)日: 2012-01-19
- 发明人: Yuniarto Widjaja
- 申请人: Yuniarto Widjaja
- 申请人地址: US CA San Jose
- 专利权人: Zeno Semiconductor, Inc.
- 当前专利权人: Zeno Semiconductor, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G11C14/00
- IPC分类号: G11C14/00
摘要:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
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