发明申请
- 专利标题: METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
- 专利标题(中): 制造半导体器件的方法
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申请号: US13183630申请日: 2011-07-15
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公开(公告)号: US20120015490A1公开(公告)日: 2012-01-19
- 发明人: Kwan-Heum LEE , Soon-Wook JUNG , Jung-Hyun PARK , Wook-Je KIM , Jong-Sang BAN
- 申请人: Kwan-Heum LEE , Soon-Wook JUNG , Jung-Hyun PARK , Wook-Je KIM , Jong-Sang BAN
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0068207 20100715
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/336
摘要:
A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.
公开/授权文献
- US08431462B2 Methods of manufacturing semiconductor devices 公开/授权日:2013-04-30