发明申请
- 专利标题： METHOD OF MANUFACTURING CAPACITOR ELEMENT
- 专利标题（中）： 制造电容元件的方法
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申请号： US13189376申请日： 2011-07-22
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公开(公告)号： US20120017408A1公开(公告)日： 2012-01-26
- 发明人: Hidetoshi MASUDA , Taisei IRIEDA , Masaru KUROSAWA , Kotaro MIZUNO
- 申请人： Hidetoshi MASUDA , Taisei IRIEDA , Masaru KUROSAWA , Kotaro MIZUNO
- 申请人地址： JP Tokyo
- 专利权人： TAIYO YUDEN CO., LTD.
- 当前专利权人： TAIYO YUDEN CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-252782 20070927
- 主分类号： H01G9/00
- IPC分类号： H01G9/00
摘要：
A capacitor element includes a pair of conductive layer, a plurality of first electrodes and second electrodes, and insulation caps for insulating these electrodes from the conductive layers. By anodizing a metal substrate in two stages, holes filled with the first electrodes and holes filled with the second electrodes are randomly distributed.
公开/授权文献
- US08555474B2 Method of manufacturing capacitor element 公开/授权日：2013-10-15