公开(公告)号：US09161438B2

公开(公告)日：2015-10-13

申请号：US13638518

申请日：2011-03-24

申请人： Hidetoshi Masuda

发明人： Hidetoshi Masuda

IPC分类号： H05K1/02 ,  H05K1/03 ,  H05K1/18 ,  H01R43/00 ,  H05K3/32 ,  H05K3/34 ,  H01R13/24

CPC分类号： H05K1/0271 ,  H01R13/2414 ,  H01R43/007 ,  H05K1/03 ,  H05K1/0306 ,  H05K1/18 ,  H05K3/32 ,  H05K3/3431 ,  H05K2201/10378 ,  H05K2201/10636 ,  H05K2201/10674 ,  H05K2201/10962 ,  Y02P70/611 ,  Y02P70/613

摘要： A stress buffer sheet 10 is constituted by arranging external conductive layers 16A and 16B on the front and rear main surfaces of a through electrode layer 13. Columnar internal electrodes 14 are formed using a porous oxide base material 30 formed by anodic oxidation of valve metal; the oxide base material 30 is selectively removed after the internal electrodes 14 have been formed, and a resin 12 is filled in a resultant void space. The resin 12 has a small Young's modulus and can be deformed together with the internal electrode 14. In a structure having a wiring board 20 and an electronic component 24 connected through the stress buffer sheet 10, when stress acts on the joint portion during mounting of the electronic component 24, the whole of the through electrode layer 13 is deformed so that the stress is absorbed or released.

摘要翻译： 应力缓冲片10通过在贯通电极层13的前后主表面上配置外部导电层16A和16B构成。柱状内部电极14使用通过阀金属的阳极氧化形成的多孔氧化物基材30形成。 在形成内部电极14之后，选择性地去除氧化物基材30，并且在所得的空隙空间中填充树脂12。 树脂12具有小的杨氏模量并且可以与内部电极14一起变形。在具有通过应力缓冲片10连接的布线板20和电子部件24的结构中，当在安装时应力作用在接合部上 电子部件24，贯通电极层13的整体变形，使得应力被吸收或释放。

公开(公告)号：US20130070388A1

公开(公告)日：2013-03-21

申请号：US13422639

申请日：2012-03-16

申请人： Yoshinari TAKE ,  Hidetoshi Masuda ,  Kenichi Ota

发明人： Yoshinari TAKE ,  Hidetoshi Masuda ,  Kenichi Ota

IPC分类号： H01G4/06

CPC分类号： H01G4/06 ,  H01G4/008 ,  H01G4/10 ,  H01G4/232 ,  H01G4/30 ,  H01G4/302

摘要： A capacitor forming unit includes a dielectric plate, a first conductor film formed on a plate upper surface region other than front and rear end portions, a first insulator film formed on the upper surface front end portion, a second insulator film formed on the upper surface rear end portion, a second conductor film formed on a plate lower surface region other than front and rear end portion, a third insulator film formed on the front end portion lower surface, and a fourth insulator film formed on the lower surface rear end portion. One or more first electrode rods are disposed in through holes, and electrically connected to the first conductor film and electrically insulated from the second conductor film. One or more second electrode rods are disposed in other through holes, and electrically connected to the second conductor film and electrically insulated from the first conductor film.

摘要翻译： 电容器形成单元包括电介质板，形成在除了前端部和后端部之外的板上表面区域上的第一导体膜，形成在上表面前端部的第一绝缘膜，形成在上表面上的第二绝缘膜 后端部，形成在除了前端部和后端部之外的板下表面区域上的第二导体膜，形成在前端部下表面上的第三绝缘膜，以及形成在下表面后端部的第四绝缘膜。 一个或多个第一电极棒设置在通孔中，并且电连接到第一导体膜并与第二导体膜电绝缘。 一个或多个第二电极棒设置在其他通孔中，并且电连接到第二导体膜并与第一导体膜电绝缘。

公开(公告)号：US20120300360A1

公开(公告)日：2012-11-29

申请号：US13422694

申请日：2012-03-16

申请人： Yoshinari TAKE ,  Hidetoshi Masuda ,  Kenichi Ota

发明人： Yoshinari TAKE ,  Hidetoshi Masuda ,  Kenichi Ota

IPC分类号： H01G4/30

CPC分类号： H01G4/30

摘要： A capacitor forming unit according to one embodiment includes a dielectric plate with a plurality of through holes; a first conductor film formed on an upper surface of the dielectric plate; a first insulator film formed on the front end portion of the upper surface of the dielectric plate; a second conductor film formed on a lower surface of the dielectric plate; a second insulator film formed on the rear end portion of the lower surface of the dielectric plate; first electrode rods disposed in some of the through holes; and second electrode rods disposed in the remaining through holes where the first electrode rods are not disposed. The first electrodes are electrically connected to the first conductor film and electrically insulated from the second conductor film. The second electrode rods are electrically connected to the second conductor film and are electrically insulated from the first conductor film.

摘要翻译： 根据一个实施例的电容器形成单元包括具有多个通孔的电介质板; 形成在电介质板的上表面上的第一导体膜; 形成在电介质板的上表面的前端部的第一绝缘膜; 形成在电介质板的下表面上的第二导体膜; 形成在电介质板的下表面的后端部分上的第二绝缘膜; 设置在一些通孔中的第一电极棒; 以及设置在其中未设置第一电极棒的剩余通孔中的第二电极棒。 第一电极电连接到第一导体膜并与第二导体膜电绝缘。 第二电极棒电连接到第二导体膜并与第一导体膜电绝缘。

公开(公告)号：US20120017408A1

公开(公告)日：2012-01-26

申请号：US13189376

申请日：2011-07-22

申请人： Hidetoshi MASUDA ,  Taisei IRIEDA ,  Masaru KUROSAWA ,  Kotaro MIZUNO

发明人： Hidetoshi MASUDA ,  Taisei IRIEDA ,  Masaru KUROSAWA ,  Kotaro MIZUNO

IPC分类号： H01G9/00

CPC分类号： H01G4/302 ,  H01G4/012 ,  H01G4/232 ,  H01G9/048 ,  H01G9/07

摘要： A capacitor element includes a pair of conductive layer, a plurality of first electrodes and second electrodes, and insulation caps for insulating these electrodes from the conductive layers. By anodizing a metal substrate in two stages, holes filled with the first electrodes and holes filled with the second electrodes are randomly distributed.

摘要翻译： 电容器元件包括一对导电层，多个第一电极和第二电极，以及用于将这些电极与导电层绝缘的绝缘帽。 通过两级对金属基板进行阳极氧化，填充有第一电极的孔和充满第二电极的孔随机分布。

公开(公告)号：US08064189B2

公开(公告)日：2011-11-22

申请号：US12139444

申请日：2008-06-13

申请人： Hidetoshi Masuda ,  Kenji Kawano

发明人： Hidetoshi Masuda ,  Kenji Kawano

IPC分类号： H01G4/005 ,  H01G4/236 ,  H01G4/228

CPC分类号： H01G4/005

摘要： A capacitor includes a dielectric material that is formed of anodic metal oxide; a pair of substantially comb-shaped surface electrodes formed on the same principal surface of the dielectric material; and plural substantially columnar internal electrodes whose one ends are connected to the respective comb-shaped portions of the pair of the surface electrodes and whose other ends extend in the thickness direction of the dielectric material.

摘要翻译： 电容器包括由阳极金属氧化物形成的电介质材料; 形成在电介质材料的同一主表面上的一对大致梳状的表面电极; 以及多个基本上柱状的内部电极，其一端连接到一对表面电极的各个梳状部分，并且其另一端在电介质材料的厚度方向上延伸。

公开(公告)号：US20090154054A1

公开(公告)日：2009-06-18

申请号：US12139444

申请日：2008-06-13

申请人： Hidetoshi Masuda ,  Kenji Kawano

发明人： Hidetoshi Masuda ,  Kenji Kawano

IPC分类号： H01G4/002 ,  B05D5/12

CPC分类号： H01G4/005

摘要： A capacitor includes a dielectric material that is formed of anodic metal oxide; a pair of substantially comb-shaped surface electrodes formed on the same principal surface of the dielectric material; and plural substantially columnar internal electrodes whose one ends are connected to the respective comb-shaped portions of the pair of the surface electrodes and whose other ends extend in the thickness direction of the dielectric material.

摘要翻译： 电容器包括由阳极金属氧化物形成的电介质材料; 形成在电介质材料的同一主表面上的一对大致梳状的表面电极; 以及多个基本上柱状的内部电极，其一端连接到一对表面电极的各个梳状部分，并且其另一端在电介质材料的厚度方向上延伸。

公开(公告)号：US07259387B2

公开(公告)日：2007-08-21

申请号：US11035592

申请日：2005-01-13

申请人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

发明人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/78 ,  G11C2213/79 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1641

摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

摘要翻译： 通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。 形成结晶性和非晶态混合的可变电阻器。 因此，形成非易失性存储元件。 更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物， 在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜 并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

公开(公告)号：US20050145910A1

公开(公告)日：2005-07-07

申请号：US11001744

申请日：2004-12-01

申请人： Yukio Tamai ,  Nobuyoshi Awaya ,  Shinji Kobayashi ,  Hidechika Kawazoe ,  Toshimasa Suzuki ,  Hidetoshi Masuda ,  Naoto Hagiwara ,  Yuji Matsushita ,  Yuji Nishi

发明人： Yukio Tamai ,  Nobuyoshi Awaya ,  Shinji Kobayashi ,  Hidechika Kawazoe ,  Toshimasa Suzuki ,  Hidetoshi Masuda ,  Naoto Hagiwara ,  Yuji Matsushita ,  Yuji Nishi

IPC分类号： H01L27/10 ,  G11C13/00 ,  H01L21/8234 ,  H01L29/76 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/52 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate, so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.

摘要翻译： 在包括通过顺序堆叠下电极，具有钙钛矿型晶体结构的可变电阻器和上电极形成的可变电阻元件的非易失性半导体存储器件中，下电极和上电极中的至少一个是颗粒电极 被配置为包括颗粒状导体集合体，使得与界面处的可变电阻器的接触面积被有效地减小以实现可变电阻元件的高初始电阻。 此外，可变电阻器的膜优选形成为高度结晶的状态。

公开(公告)号：US06192198B1

公开(公告)日：2001-02-20

申请号：US08888819

申请日：1997-07-07

申请人： Kazunari Kitani ,  Takanori Kodaira ,  Masanori Ohtsuka ,  Hidetoshi Masuda

发明人： Kazunari Kitani ,  Takanori Kodaira ,  Masanori Ohtsuka ,  Hidetoshi Masuda

IPC分类号： G03B1334

CPC分类号： G03B13/02 ,  G03B2206/004 ,  G03B2213/025

摘要： A camera capable of print format selection includes a connecting unit for responding to at least one of a unit for forming information for focus adjustment on the basis of one of distance measurement information of a plurality of portions in a scene and defocus information, and a unit for different print formats, thereby affecting an operation related to at least the other unit, or includes a connecting unit for responding to at least one of a unit for a predetermined distance range and a unit for different print formats, thereby affecting an operation related to at least the other unit.

摘要翻译： 能够进行打印格式选择的照相机包括：连接单元，用于响应基于场景中的多个部分的距离测量信息和散焦信息之一的用于形成用于焦点调整的信息的单元中的至少一个，以及单元 对于不同的打印格式，从而影响与至少另一个单元相关的操作，或者包括用于响应预定距离范围的单元中的至少一个的连接单元和用于不同打印格式的单元，从而影响与 至少另一个单位。

公开(公告)号：US08769170B2

公开(公告)日：2014-07-01

申请号：US13234396

申请日：2011-09-16

申请人： Masayo Miyasaka ,  Hidetoshi Masuda

发明人： Masayo Miyasaka ,  Hidetoshi Masuda

IPC分类号： G06F3/00 ,  G06F5/00

CPC分类号： G06K15/402 ,  G06K15/1803 ,  G07G5/00

摘要： Managing commands that have not been executed is simplified while maintaining a state in which real-time commands can be executed. A printer 2 has a write control unit 21A that writes received commands to a receive buffer 31, a command execution unit 21B that executes the written commands, and a real-time command execution unit 21C that executes written commands that are real-time commands. The printer 2 enters a full-buffer mode as needed by the capacity of available storage space in the receive buffer 31, and when in the full-buffer mode the write control unit 21A cyclically writes commands to an auxiliary space created in the receive buffer, and the real-time command execution unit 21C reads and executes real-time commands from the auxiliary space.

摘要翻译： 管理尚未执行的命令被简化，同时保持可以执行实时命令的状态。 打印机2具有将接收到的命令写入到接收缓冲器31的写入控制单元21A，执行写入的命令的命令执行单元21B以及执行作为实时命令的写入命令的实时命令执行单元21C。 打印机2根据需要通过接收缓冲器31中的可用存储空间的容量进入全缓冲器模式，并且当处于全缓冲器模式时，写入控制单元21A将命令循环地写入在接收缓冲器中创建的辅助空间， 并且实时命令执行单元21C从辅助空间读取并执行实时命令。