发明申请
- 专利标题： Reducing Delamination Between an Underfill and a Buffer layer in a Bond Structure
- 专利标题（中）： 减少粘结结构中底层填料和缓冲层之间的分层
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申请号： US12840900申请日： 2010-07-21
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公开(公告)号： US20120018875A1公开(公告)日： 2012-01-26
- 发明人: Ching-Jung Yang , Chang-Pin Huang , Tzuan-Horng Liu , Michael Shou-Ming Tong , Ying-Ju Chen , Tung-Liang Shao , Hsien-Wei Chen , Hao-Yi Tsai , Mirng-Ji Lii
- 申请人： Ching-Jung Yang , Chang-Pin Huang , Tzuan-Horng Liu , Michael Shou-Ming Tong , Ying-Ju Chen , Tung-Liang Shao , Hsien-Wei Chen , Hao-Yi Tsai , Mirng-Ji Lii
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498
摘要：
A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
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