Abstract:
Aspects of the disclosure relate generally to rack systems for housing computing devices. The rack may include a plurality of removable shelves. A removable shelf may include a column having a plurality of slots. By stacking a plurality of the removable shelves in the rack, a larger column may be formed. This larger column may provide additional space to mount other features. In one example, the larger column may be used to mount a wire duct. The wire duct may be attached to a mounting plate having a plurality of hooks. The hooks of the mounting plate may mate with the slots of the columns of the shelves. The mounting plates may be used to mount features at other locations on the rack as well.
Abstract:
Note management methods and systems are provided. First, inputs are received along a timeline, and at least one note is generated according to the inputs. The at least one note is recorded and arranged along the timeline. In some embodiments, a thumbnail is generated for a respective predefined interval on the timeline according to the at least one note in the respective predefined interval, and the thumbnail of the respective predefined interval is displayed along the timeline.
Abstract:
A conductive feature on a semiconductor component is disclosed. A first passivation layer is formed over a substrate. A bond pad is formed over the first passivation layer. A second passivation layer overlies the first passivation layer and the bond pad. The second passivation layer has a first opening overlying the bond pad and a plurality of second openings exposing a top surface of the first passivation layer. A buffer layer overlies the second passivation layer and fills the plurality of second openings. The buffer layer has a third opening overlapping the first opening and together exposes a portion the bond pad. The combined first opening and third opening has sidewalls. An under bump metallurgy (UBM) layer overlies the sidewalls of the combined first opening and third opening, and contacts the exposed portion of the bond pad. A conductive feature overlies the UBM layer.
Abstract:
A device includes a metal pad, a passivation layer overlapping edge portions of the metal pad, and a first polymer layer over the passivation layer. A Post-Passivation-Interconnect (PPI) has a level portion overlying the first polymer layer, and a plug portion that has a top connected to the level portion. The plug portion extends into the first polymer layer. A bottom surface of the plug portion is in contact with a dielectric material. A second polymer layer is overlying the first polymer layer.
Abstract:
Provided is a test structure for testing an unpackaged semiconductor wafer. The test structure includes a force-application component that is coupled to an interconnect structure of the semiconductor wafer. The force-application component is operable to exert a force to the semiconductor wafer. The test structure also includes first and second test portions that are coupled to the interconnect structure. The first and second test portions are operable to measure an electrical performance associated with a predetermined region of the interconnect structure. The first and second test portions are operable to measure the electrical performance while the force is exerted to the semiconductor wafer.
Abstract:
Aspects of the disclosure relate generally to a patch panel for networking components. The patch panel may facilitate access to the rear ports of the networking components. In one example, the patch panel may include a body and a face, and may mount to the networking component. Once mounted, one or more jumpers may be connected to rear ports on the component as well as connection interfaces mounted on the face of the patch panel. In this way, the rear ports may be accessible from the front of the component by the connection interfaces.
Abstract:
A wafer level chip scale semiconductor device comprises a semiconductor die, a first under bump metal structure and a second under bump metal structure. The first under bump metal structure having a first enclosure is formed on a corner region or an edge region of the semiconductor die. A second under bump metal structure having a second enclosure is formed on an inner region of the semiconductor die. The first enclosure is greater than the second enclosure.
Abstract:
A semiconductor device includes a passivation layer, a first protective layer, an interconnect layer, and a second protective layer successively formed on a semiconductor substrate. The interconnect layer has an exposed portion, on which a barrier layer and a solder bump are formed. At least one of the passivation layer, the first protective layer, the interconnect layer and the second protective layer includes at least one slot formed in a region outside a conductive pad region.
Abstract:
A system for managing and filtering incoming messages to a mobile device is configured to receive incoming messages using multiple formats, such as e-mail, Short Messaging System (SMS) messages, Multimedia Message System (MMS) messages, or other electronic messaging formats. One or more message filters are used to consolidate and display high importance messages by the device in a single location. The message filters may be configured to select incoming messages based on factors such as the identity of the sender and the destination account. After receiving a new message, the system compares characteristics of the incoming message to the key characteristics defined by one or more of the filters. If an incoming message matches one of the filters, the system adds the matching message to a list of high importance messages. The system provides a separate user interface to display the high importance messages.
Abstract:
A semiconductor device is provided that includes a semiconductor substrate, a plurality of dies formed on the semiconductor substrate, the plurality of dies being separated from one another by a first region extending along a first direction and a second region extending along a second direction different from the first direction, a dummy metal structure formed within a third region that includes a region defined by an intersection of the first region and the second region, a plurality of metal interconnection layers formed over the substrate, and a plurality of dielectric layers formed over the substrate. Each of the metal interconnection layers is disposed within each of the dielectric layers and a dielectric constant of at least one of the dielectric layers is less than about 2.6.