Invention Application
- Patent Title: METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE AND APPARATUSES PERFORMING THE METHOD
- Patent Title (中): 编程非易失性存储器件的方法及其方法
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Application No.: US13190913Application Date: 2011-07-26
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Publication No.: US20120020156A1Publication Date: 2012-01-26
- Inventor: Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
- Applicant: Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0071770 20100726
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
A method of programming multi-level cells included in a spare region, the method including programming first page data and at least one first dummy data in a first multi-level cell; and programming second page data and at least one second dummy data in a second multi-level cell.
Public/Granted literature
- US08711618B2 Method for programming non-volatile memory device and apparatuses performing the method Public/Granted day:2014-04-29
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