发明申请
- 专利标题: Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern
- 专利标题(中): 磁存储器件,包括其的电子系统和存储卡,其制造方法以及控制磁性图案的磁化方向的方法
-
申请号: US13181957申请日: 2011-07-13
-
公开(公告)号: US20120023386A1公开(公告)日: 2012-01-26
- 发明人: Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
- 申请人: Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR1020100072051 20100726
- 主分类号: G06F11/10
- IPC分类号: G06F11/10 ; H01L21/8246 ; H01L29/82
摘要:
Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.