Invention Application
- Patent Title: MEMORY DEVICE
- Patent Title (中): 内存设备
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Application No.: US13177984Application Date: 2011-07-07
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Publication No.: US20120025283A1Publication Date: 2012-02-02
- Inventor: Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
- Applicant: Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0073212 20100729
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/06

Abstract:
In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.
Public/Granted literature
- US08723297B2 Memory device Public/Granted day:2014-05-13
Information query
IPC分类: