发明申请
US20120025291A1 NONVOLATILE SEMICONDUCTOR MEMORY TRANSISTOR AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY
有权
非易失性半导体存储器晶体管和制造非易失性半导体存储器的方法
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY TRANSISTOR AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY
- 专利标题（中）： 非易失性半导体存储器晶体管和制造非易失性半导体存储器的方法
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申请号： US13163319申请日： 2011-06-17
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公开(公告)号： US20120025291A1公开(公告)日： 2012-02-02
- 发明人: Fujio Masuoka , Hiroki Nakamura
- 申请人： Fujio Masuoka , Hiroki Nakamura
- 优先权： JP2010-168148 20100727
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A nonvolatile semiconductor memory transistor includes an island-shaped semiconductor having a source region, a channel region, and a drain region formed in this order from the silicon substrate side, a floating gate arranged so as to surround the outer periphery of the channel region with a tunnel insulating film interposed between the floating gate and the channel region, a control gate arranged so as to surround the outer periphery of the floating gate with an inter-polysilicon insulating film interposed between the control gate and the floating gate, and a control gate line electrically connected to the control gate and extending in a predetermined direction. The inter-polysilicon insulating film is arranged so as to be interposed between the floating gate and the lower and inner side surfaces of the control gate and between the floating gate and the lower surface of the control gate line.