- 专利标题: GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE
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申请号: US12844029申请日: 2010-07-27
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公开(公告)号: US20120028052A1公开(公告)日: 2012-02-02
- 发明人: Jack O. Chu , Christos Dimitrakopoulos , Marcus O. Freitag , Alfred Grill , Timothy J. McArdle , Chun-Yung Sung , Robert L. Wisnieff
- 申请人: Jack O. Chu , Christos Dimitrakopoulos , Marcus O. Freitag , Alfred Grill , Timothy J. McArdle , Chun-Yung Sung , Robert L. Wisnieff
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: B32B17/06
- IPC分类号: B32B17/06 ; H01L21/20
摘要:
A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.
公开/授权文献
- US08877340B2 Graphene growth on a non-hexagonal lattice 公开/授权日:2014-11-04