发明申请
- 专利标题: DEVICE OF FILLING METAL IN THROUGH-VIA-HOLE OF SEMICONDUCTOR WAFER AND METHOD USING THE SAME
- 专利标题(中): 在半导体波长通孔中填充金属的装置及其使用方法
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申请号: US13262293申请日: 2009-12-30
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公开(公告)号: US20120034776A1公开(公告)日: 2012-02-09
- 发明人: Se Hoon Yoo , Chang Woo Lee , Jun Ki Kim , Jeong Han Kim , Cheol Hee Kim , Young Ki Ko , Yue Seon Shin
- 申请人: Se Hoon Yoo , Chang Woo Lee , Jun Ki Kim , Jeong Han Kim , Cheol Hee Kim , Young Ki Ko , Yue Seon Shin
- 优先权: KR10-2009-0029081 20090403
- 国际申请: PCT/KR2009/007983 WO 20091230
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; B23K9/04
摘要:
A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix the wafer having the through-via-hole formed therein; a upper chamber 120 installed on the jig base; a lower chamber installed under the jig base; a heater installed in the upper chamber, the heater configured to apply heat to filling metal placed on the wafer to melt the filling metal; and a vacuum pump configured to generate pressure difference between the upper chamber and the lower chamber by the pressure of the lower chamber reduced by discharging air of the lower chamber 130 outside, only to fill the melted filling metal in the through-via-hole.
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