Invention Application
US20120037990A1 Method and system for pre-migration of metal ions in a semiconductor package
有权
半导体封装中金属离子预迁移的方法和系统
- Patent Title: Method and system for pre-migration of metal ions in a semiconductor package
- Patent Title (中): 半导体封装中金属离子预迁移的方法和系统
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Application No.: US12806428Application Date: 2010-08-12
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Publication No.: US20120037990A1Publication Date: 2012-02-16
- Inventor: Craig J. Rotay , John C. Pritiskutch
- Applicant: Craig J. Rotay , John C. Pritiskutch
- Applicant Address: US TX Carrollton
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Carrollton
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L23/488
Abstract:
According to an embodiment of the present disclosure, a method of pre-migrating metal ions is disclosed. A metal in a semiconductor configuration is exposed to water and oxygen to yield metal ions. The metal couples a conductor to another material. The metal and the conductor are exposed to an electrical field in such a manner that one or both of the metal and the conductor becomes an anode to a corresponding cathode. The metal ions are then allowed to migrate from the anode to the cathode to form a migrated metal. Finally, a migration inhibitor is applied on top of the migrated metal to prevent further migration.
Public/Granted literature
- US08557703B2 Method for pre-migration of metal ions in a semiconductor package Public/Granted day:2013-10-15
Information query
IPC分类:
