Invention Application
- Patent Title: Stacked Semiconductor Device And Method Of Fabricating The Same
- Patent Title (中): 堆叠半导体器件及其制造方法
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Application No.: US13110433Application Date: 2011-05-18
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Publication No.: US20120038045A1Publication Date: 2012-02-16
- Inventor: Ho-Cheol Lee
- Applicant: Ho-Cheol Lee
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0077827 20100812
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48 ; H01L21/50

Abstract:
A stacked semiconductor device may have a plurality of chips stacked in three-dimension. The stacked semiconductor device may include a first semiconductor chip and at least one second semiconductor chip. The first semiconductor chip may include a plurality of first through silicon vias (TSVs). The at least one second semiconductor chip may include a plurality of second TSVs. The at least one second semiconductor chip may be stacked above the first semiconductor chip and may be thinner than the first semiconductor chip. Therefore, the stacked semiconductor device may have an improved reliability.
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