Invention Application
US20120038045A1 Stacked Semiconductor Device And Method Of Fabricating The Same 审中-公开
堆叠半导体器件及其制造方法

Stacked Semiconductor Device And Method Of Fabricating The Same
Abstract:
A stacked semiconductor device may have a plurality of chips stacked in three-dimension. The stacked semiconductor device may include a first semiconductor chip and at least one second semiconductor chip. The first semiconductor chip may include a plurality of first through silicon vias (TSVs). The at least one second semiconductor chip may include a plurality of second TSVs. The at least one second semiconductor chip may be stacked above the first semiconductor chip and may be thinner than the first semiconductor chip. Therefore, the stacked semiconductor device may have an improved reliability.
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