发明申请
- 专利标题： PIEZOELECTRIC SINGLE CRYSTAL INGOT, PRODUCING METHOD THEREFOR AND PIEZOELECTRIC SINGLE CRYSTAL DEVICE
- 专利标题（中）： 压电单晶，其制造方法和压电单晶装置
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申请号： US12858501申请日： 2010-08-18
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公开(公告)号： US20120043494A1公开(公告)日： 2012-02-23
- 发明人: Mitsuyoshi Matsushita
- 申请人： Mitsuyoshi Matsushita
- 申请人地址： JP Tokyo
- 专利权人： JFE MINERAL COMPANY, LTD.
- 当前专利权人： JFE MINERAL COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L41/18
- IPC分类号： H01L41/18
摘要：
A piezoelectric single crystal ingot is produced by the Bridgman method and contains a relaxor having a composition of Pb(Mg, Nb)O3 and lead titanate having a composition of PbTiO3. In the piezoelectric single crystal ingot, the compositional fraction of lead titanate does not vary monotonically in the growth direction of a single crystal and the variation of the compositional fraction thereof is within the range of ±2.0 mole percent over a length of 30 mm or more. A piezoelectric single crystal device is produced from the piezoelectric single crystal ingot.
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