Piezoelectric single crystal device and fabrication method thereof
    1.
    发明授权
    Piezoelectric single crystal device and fabrication method thereof 有权
    压电单晶器件及其制造方法

    公开(公告)号:US07888848B2

    公开(公告)日:2011-02-15

    申请号:US11578953

    申请日:2004-10-29

    摘要: The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k31 in a lateral vibration mode at a high value of 50% or more without a decrease even in an operating environment in which the temperature changes from room temperature to a high temperature (specifically, 150° C.), and also provides a fabrication method thereof. Specifically, assuming that the [101] axis of a tetragonal system having the [001] axis as a C axis (with the largest lattice constant) is a polarization direction 3, a normal direction 1 to an edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [-101] axis substantially orthogonal to the polarization direction 3, the range including the [-101] axis. Assuming that the [011] axis of the tetragonal system is the polarization direction 3, the normal direction 1 to the edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [0-11] axis substantially orthogonal to the polarization direction 3, the range including the [0-11] axis. In any case, the electromechanical coupling factor k31 in the direction orthogonal to the polarization direction 3, i.e., in the lateral vibration mode, is 50% or more.

    摘要翻译: 本发明提供一种耐热性优异的压电单晶体装置,即使在温度变化的工作环境下也能够在横向振动模式下稳定地保持机电耦合系数k31在50%以上的高值,而不降低 从室温到高温(具体地,150℃),并且还提供其制造方法。 具体而言,假定[001]轴为C轴(最大晶格常数)的四方晶系的[101]轴为偏振方向3,则压电元件的边缘面T的法线方向1为 在相对于基本上垂直于偏振方向3的[-101]轴的±25°的立体角范围内,包括[-101]轴的范围。 假设四方晶系的[011]轴为偏振方向3,则相对于[0-11],压电元件的边缘面T的法线方向1为±25°的立体角度范围内, 基本上与偏振方向3正交的轴,包括[0-11]轴的范围。 在任何情况下,与偏振方向3正交的方向即横向振动模式下的机电耦合系数k31为50%以上。

    Piezoelectric single crystal and piezoelectric single-crystal device and method for manufacturing the same
    2.
    发明授权
    Piezoelectric single crystal and piezoelectric single-crystal device and method for manufacturing the same 有权
    压电单晶和压电单晶器件及其制造方法

    公开(公告)号:US07518292B2

    公开(公告)日:2009-04-14

    申请号:US10575955

    申请日:2004-10-14

    IPC分类号: H01L41/187

    摘要: An inexpensive piezoelectric single-crystal device being excellent in the piezoelectric characteristics and having a complex perovskite structure can be provided by adding a specific additive to a lead magnesium niobate-lead titanate (PMN-PT) single crystal or a lead zinc niobate-lead titanate (PZN-PT or PZNT) single crystal. Specifically, the piezoelectric single crystal has a complex perovskite structure and is formed of a composition containing 35 to 98 mol % lead magnesium niobate [Pb(Mg1/3Nb2/3)O3] or lead zinc niobate [Pb(Zn1/3Nb2/3)O3], 0.1 to 64.9 mol % lead titanate [PbTiO3], and 0.05 to 30 mol % lead indium niobate [Pb(In1/2Nb1/2)O3] wherein calcium is substituted for 0.05 to 10 mol % lead in the composition.

    摘要翻译: 可以通过向铌酸铅镁铌酸铅(PMN-PT)单晶或铌酸铅铅 - 钛酸铅添加特定添加剂来提供压电特性优异且具有复合钙钛矿结构的便宜的压电单晶器件 (PZN-PT或PZNT)单晶。 具体地说,压电单晶具有复合的钙钛矿结构,由含有35〜98摩尔%的铌酸铅镁[Pb(Mg1 / 3Nb2 / 3)O3]或铌酸铅锌[Pb(Zn1 / 3Nb2 / 3) O 3],0.1〜64.9摩尔%的钛酸铅[PbTiO 3]和0.05〜30摩尔%的铌酸铅铟[Pb(In1 / 2Nb1 / 2)O3],其中,钙在组合物中的0.05〜10摩尔%的铅。

    Piezoelectric single crystal device and fabrication method thereof
    3.
    发明授权
    Piezoelectric single crystal device and fabrication method thereof 有权
    压电单晶器件及其制造方法

    公开(公告)号:US07015628B2

    公开(公告)日:2006-03-21

    申请号:US10846681

    申请日:2004-05-17

    IPC分类号: H01L41/04

    摘要: A piezoelectric single crystal device for actively employing the electromechanical coupling factor k31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

    摘要翻译: 提供了一种用于在与偏振方向正交的方向上主动采用机电耦合因子k 31的压电单晶器件。 具体地说,在假立方体系的[001]轴的偏振方向为压电元件边缘面的法线方向1与在[010]和[100]的晶面内与畴结构正交的方向n之间的角度, 与偏振方向正交的轴的范围为0〜15°或40〜50°。

    Domain controlled piezoelectric single crystal and fabrication method therefor
    4.
    发明授权
    Domain controlled piezoelectric single crystal and fabrication method therefor 有权
    域控压电单晶及其制造方法

    公开(公告)号:US06756238B2

    公开(公告)日:2004-06-29

    申请号:US10246400

    申请日:2002-09-19

    IPC分类号: H01L2100

    CPC分类号: H01L41/257 H01L41/1875

    摘要: A domain controlled piezoelectnc single crystal is disclosed which uses a lateral vibration mode for an electromechanical coupling factor k31 not less than 70% and a piezoelectric constant −d31 not less than 1200 pC/N, with an electromechanical coupling factor k33 in the longitudinal vibration mode not less than 80% and a piezoelectric constant d33 not less than 800 pC/N. Also, a piezoelectric single crystal is disclosed which uses a high-performance longitudinal vibration mode with k31 not more than 30%. A fabrication method applies a DC electric field of 400 V/mm to 1500 V/mm for a maximum of two hours in a temperature range of 20° C. to 200° C. as polarization conditions in the thickness direction of the piezoelectric single crystal. The method can include cooling, or heating and cooling between temperature boundaries of rhombohedral and tetragonal crystals or between tetragonal and cubic crystals or within a cubic crystal temperature range.

    摘要翻译: 公开了一种领域控制的压电单体,其使用侧向振动模式用于不小于70%的机电耦合系数k31和不小于1200pC / N的压电常数-d31,纵向振动模式中的机电耦合系数k33 不小于80%,压电常数d33不低于800pC / N。 此外,公开了使用k31不高于30%的高性能纵向振动模式的压电单晶。 制造方法在20℃至200℃的温度范围内将400V / mm至1500V / mm的DC电场最大化为2小时,作为压电单晶的厚度方向的极化条件 。 该方法可以包括在菱方体晶体和四方晶体的温度边界之间或四方晶体和立方晶体之间或在立方晶体温度范围内的冷却或加热和冷却。

    Fluid agitator
    5.
    发明授权
    Fluid agitator 失效
    流体搅拌器

    公开(公告)号:US4982373A

    公开(公告)日:1991-01-01

    申请号:US423648

    申请日:1989-10-17

    摘要: The present invention relates to a fluid agitator which may stir fluid in a closed space without leakage of the fluid. The fluid agitator has a motive means and a bearing means installed in the closed space.In the fluid agitator employing a electric motor as the motive means, only the stator coil of the motor which is weak in its resistance against high temperatures and humid atmosphere is sealed in a sealing chamber. The sealing chamber may be provided with a cooling device to cool the inside thereof. The driving shaft of the motor is supported by a bearing having resistance to high temperatures and high humidity and is provided with an agitating blade.In the fluid agitator employing a turbine system as the motive means, a turbine chamber and a turbine blade are set in the closed space. A fluid supply is furnished to introduce fluid into the turbine chamber from outside of the closed space for driving and rotating the turbine blade. The turbine blade is connected to an agitating blade through a rotation transmission.

    摘要翻译: 本发明涉及一种流体搅拌器,其可以在封闭空间内搅拌流体而不泄漏流体。 流体搅拌器具有动力装置和安装在封闭空间中的轴承装置。 在采用电动机的流体搅拌器作为动力装置中,只有电阻器耐高温和潮湿气氛较弱的电动机的定子线圈被密封在密封室中。 密封室可以设置有冷却装置以冷却其内部。 马达的驱动轴由具有耐高温和高湿度的轴承支撑,并且设置有搅拌叶片。 在采用涡轮机系统作为动力装置的流体搅拌器中,将涡轮室和涡轮叶片设置在封闭空间中。 流体供应装置用于将流体从封闭空间的外部引入涡轮室,用于驱动和旋转涡轮机叶片。 涡轮叶片通过旋转传动装置连接到搅拌叶片。

    PIEZOELECTRIC SINGLE CRYSTAL INGOT, PRODUCING METHOD THEREFOR AND PIEZOELECTRIC SINGLE CRYSTAL DEVICE
    6.
    发明申请
    PIEZOELECTRIC SINGLE CRYSTAL INGOT, PRODUCING METHOD THEREFOR AND PIEZOELECTRIC SINGLE CRYSTAL DEVICE 有权
    压电单晶,其制造方法和压电单晶装置

    公开(公告)号:US20120043494A1

    公开(公告)日:2012-02-23

    申请号:US12858501

    申请日:2010-08-18

    IPC分类号: H01L41/18

    摘要: A piezoelectric single crystal ingot is produced by the Bridgman method and contains a relaxor having a composition of Pb(Mg, Nb)O3 and lead titanate having a composition of PbTiO3. In the piezoelectric single crystal ingot, the compositional fraction of lead titanate does not vary monotonically in the growth direction of a single crystal and the variation of the compositional fraction thereof is within the range of ±2.0 mole percent over a length of 30 mm or more. A piezoelectric single crystal device is produced from the piezoelectric single crystal ingot.

    摘要翻译: 通过Bridgman法制造压电单晶锭,并含有具有Pb(Mg,Nb)O 3组成的弛豫和PbTiO 3组成的钛酸铅。 在压电单晶锭中,钛酸铅的组成分数在单晶的生长方向上不变化,其组成分数的变化在30mm以上的长度的±2.0摩尔%的范围内 。 由压电单晶锭制造压电单晶器件。

    Piezoelectric single crystal device
    7.
    发明授权
    Piezoelectric single crystal device 有权
    压电单晶器件

    公开(公告)号:US07402938B2

    公开(公告)日:2008-07-22

    申请号:US11257159

    申请日:2005-10-25

    IPC分类号: H01L41/187

    CPC分类号: H01L41/18 H01L41/1875

    摘要: A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.

    摘要翻译: 提供了在特定的高温范围内(T -20)℃下表现出优异的压电性能的压电单晶器件, 其中T 表示假立方体系和四方晶系之间的相变温度。 具体地,压电单晶器件由具有由[Pb(Mg,Nb)O 3](1-X))表示的组成的单晶组成[PbTiO (X),其中X在0.26至0.29的范围内并且具有复杂的钙钛矿结构,其中在25℃下的电感率为5,000或 并且在上述单晶的假立方体系和四方晶系之间的相变温度下的比感应能力比25℃下的电感率高2.5倍以上。

    Noncontact mechanical seal
    8.
    发明授权
    Noncontact mechanical seal 失效
    非接触机械密封

    公开(公告)号:US5121931A

    公开(公告)日:1992-06-16

    申请号:US610351

    申请日:1990-11-07

    IPC分类号: F16J15/34 F16J15/44

    摘要: A noncontact mechanical seal has a seal ring which includes a sealing face portion formed by ventilative porous materials and a ventilating portion to pass a gas of a high pressure side to the sealing face portion from the back side of said sealing face portion. The sealing face portion is preferably a porous ring independently formed of said seal ring and mounted on the seal ring providing a space at the back side thereof. The seal ring preferably is provided with a small diameter thin portion at the portion forming the bottom of the space.

    摘要翻译: 非接触式机械密封件具有密封环,该密封环包括由通风多孔材料形成的密封面部分和通气部分,以将高压侧气体从密封面部分的后侧传送到密封面部分。 密封面部分优选为由所述密封环独立地形成并安装在密封环上的多孔环,其在其后侧提供空间。 密封环优选在形成空间的底部的部分处设置有小直径的薄部。

    Piezoelectric single crystal device
    10.
    发明授权
    Piezoelectric single crystal device 有权
    压电单晶器件

    公开(公告)号:US08004164B2

    公开(公告)日:2011-08-23

    申请号:US12450164

    申请日:2008-04-14

    IPC分类号: H01L41/08

    摘要: In a piezoelectric device that uses a vibration mode in a direction parallel to a polarization direction, a single crystal device that achieves an electromechanical coupling factor of 65% or more, which is more than the electromechanical coupling factor (about 60%) of the existing flat plane type piezoelectric single crystal device in that vibrational direction, is provided by performing certain treatment to its device plane. Specifically, a piezoelectric portion having a comb-shaped structure in which a plurality of slits are formed with a certain arrangement pitch on either of device planes whose polarization direction is their normal direction, the slits having a depth extending in a direction substantially perpendicular to the device plane and being filled with an insulating material, is formed to achieve 65% or more of an electromechanical coupling factor in a direction parallel to the polarization direction.

    摘要翻译: 在与偏振方向平行的方向上使用振动模式的压电装置中,实现机电耦合系数为65%以上的单晶装置,超过现有的机电耦合系数(约60%) 通过对其器件平面进行一定的处理来提供在该振动方向上的平面型压电单晶器件。 具体而言,具有梳状结构的压电部分,其中多个狭缝在其偏振方向为其法线方向的器件平面上的任一个上以一定的排列间距形成,该狭缝具有沿基本上垂直于该方向的方向延伸的深度 形成为在绝缘材料上填充的,在与极化方向平行的方向上达到机电耦合系数的65%以上的装置面。