发明申请
- 专利标题： SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
- 专利标题（中）： 具有改进的光提取效率的半导体发光器件
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申请号： US13286881申请日： 2011-11-01
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公开(公告)号： US20120043557A1公开(公告)日： 2012-02-23
- 发明人: Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
- 申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
- 申请人地址： KR Suwon
- 专利权人： SAMSUNG LED CO., LTD.
- 当前专利权人： SAMSUNG LED CO., LTD.
- 当前专利权人地址： KR Suwon
- 优先权： KR1020040089313 20041104
- 主分类号： H01L33/02
- IPC分类号： H01L33/02 ; H01L33/22
摘要：
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
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