发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13205845申请日: 2011-08-09
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公开(公告)号: US20120043581A1公开(公告)日: 2012-02-23
- 发明人: Masaki KOYAMA , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
- 申请人: Masaki KOYAMA , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
- 优先权: JP2010-182356 20100817; JP2010-195837 20100901
- 主分类号: H01L29/739
- IPC分类号: H01L29/739
摘要:
In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.
公开/授权文献
- US08716746B2 Semiconductor device 公开/授权日:2014-05-06