发明申请
US20120043623A1 METHOD AND STRUCTURE FOR FORMING HIGH-K/METAL GATE EXTREMELY THIN SEMICONDUCTOR ON INSULATOR DEVICE
有权
在绝缘体器件上形成高K /金属栅极极微电子半导体的方法与结构
- 专利标题： METHOD AND STRUCTURE FOR FORMING HIGH-K/METAL GATE EXTREMELY THIN SEMICONDUCTOR ON INSULATOR DEVICE
- 专利标题（中）： 在绝缘体器件上形成高K /金属栅极极微电子半导体的方法与结构
-
申请号： US12859414申请日： 2010-08-19
-
公开(公告)号： US20120043623A1公开(公告)日： 2012-02-23
- 发明人: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni
- 申请人： Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device is provided that includes a gate structure present on a substrate. The gate structure includes a gate conductor with an undercut region in sidewalls of a first portion of the gate conductor, wherein a second portion of the gate conductor is present over the first portion of the gate conductor and includes a protruding portion over the undercut region. A spacer is adjacent to sidewalls of the gate structure, wherein the spacer includes an extending portion filling the undercut region. A raised source region and a raised drain region is present adjacent to the spacers. The raised source region and the raised drain region are separated from the gate conductor by the extending portion of the spacers.
公开/授权文献
信息查询
IPC分类:
