Invention Application
US20120044606A1 ESD PROTECTION OF AN RF PA SEMICONDUCTOR DIE USING A PA CONTROLLER SEMICONDUCTOR DIE
有权
使用PA控制器半导体器件的RF PA半导体器件的ESD保护
- Patent Title: ESD PROTECTION OF AN RF PA SEMICONDUCTOR DIE USING A PA CONTROLLER SEMICONDUCTOR DIE
- Patent Title (中): 使用PA控制器半导体器件的RF PA半导体器件的ESD保护
-
Application No.: US13288373Application Date: 2011-11-03
-
Publication No.: US20120044606A1Publication Date: 2012-02-23
- Inventor: David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant: David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant Address: US NC Greensboro
- Assignee: RF MICRO DEVICES, INC.
- Current Assignee: RF MICRO DEVICES, INC.
- Current Assignee Address: US NC Greensboro
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H03F3/68
Abstract:
A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.
Public/Granted literature
- US08842399B2 ESD protection of an RF PA semiconductor die using a PA controller semiconductor die Public/Granted day:2014-09-23
Information query
